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Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate

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Shenzhen Canyi Technology Co., Ltd.

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Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate

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Brand Name :	JC
Model Number :	OSPF7N60-
Certification :	RoHS
Price :	Negotiated
Payment Terms :	Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability :	15,000,000PCS Per Day
Delivery Time :	1 - 2 Weeks

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Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate

Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate

Metal Oxide Semiconductor Field Effect Transistor Features

Low gate charge
Low Rdson(typical 5.5mΩ)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
Avalanche energy tested
Improved dv/dt capability,high ruggedness

Metal Oxide Semiconductor Field Effect Transistor Applications

High efficiency switch mode power supplies
Electronic lamp ballast

Absolute Maximum Ratings (Tc=25°C)

Symbol	Parameters	Ratings	Unit
V_DSS	Drain-Source Voltage	600	V
V_GS	Gate-Source Voltage-Continuous	±30	V
I_D	Drain Current-Continuous(Note 2)	7	A
I_DM	Drain Current-Single Plused(Note 1)	28	A
P_D	Power Dissipation (Note 2)	48	W
T_j	Max.Operating junction temperature	150	℃

Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol		Parameters		Min	Typ	Max	Units	Conditions
Static Characteristics
B_VDSS		Drain-Source Breakdown VoltageCurrent (Note 1)		600	--	--	V	I_D=250µA,V_GS=0V,T_J=25°C
V_GS(th)		Gate Threshold Voltage		2.0	--	4.0	V	V_DS=V_GS,I_D=250μA
R_DS(on)		Drain-Source On-Resistance		--	0.90	1.05	Ω	V_GS=10V,I_D=3.5A
I_GSS		Gate-Body Leakage Current		--	--	±100	nA	V_GS=±30V,V_DS=0
I_DSS		Zero Gate Voltage Drain Current		--	--	1	μA	V_DS=600V,V_GS=0
gfs		Forward Transconductance		2.3	--	--	S	V_D_S=15V,I_D=3.5A
Switching Characteristics
T_d(on)		Turn-On Delay Time	--		20	40	ns	V_DS=300V,I_D=7A, R_G=25Ω(Note 2)
T_r		Rise Time	--		55	110	ns
T_d(_off₎		Turn-Off Delay Time	--		90	180	ns
T_f		Fall Time	--		60	120	ns
Q_g		Total Gate Charge	--		40	52	nC	V_DS=520V,V_GS=10V, I_D=7A(Note 2)
Q_gs		Gate-Source Charge	--		6.5	--	nC
Q_gd		Gate-Drain Charge	--		16.5	--	nC
Dynamic Characteristics
C_iss	Input Capacitance		--		970	1260	pF	V_DS=25V,V_GS=0, f=1MHz
C_oss	Output Capacitance		--		80	110	pF
C_rss	Reverse Transfer Capacitance		--		17	22	pF
I_S	Continuous Drain-Source Diode Forward Current(Note 2)		--		--	7	A
V_SD	Diode Forward On-Voltage		--		--	1.4	V	I_S=7A,V_GS=0

Our Company

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.

Our Advantage:
1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading experience individually.
5. Strong technical support to help customers choose the most appropriate products.
6. Be proud of the product and the competitive price.

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